| Autor: |
Y Pan, D Wu, J R Angevaare, H Luigjes, E Frantzeskakis, N de Jong, E van Heumen, T V Bay, B Zwartsenberg, Y K Huang, M Snelder, A Brinkman, M S Golden, A de Visser |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 16, Iss 12, p 123035 (2014) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/16/12/123035 |
| Popis: |
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx.doi.org/10.1103/PhysRevB.84.165311 84 http://dx.doi.org/10.1103/PhysRevB.84.165311 ). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi $_{1.46}$ Sb $_{0.54}$ Te $_{1.7}$ Se $_{1.3}$ . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μ m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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