| Autor: |
Kwangeun Kim, Jaewon Jang, Hyungtak Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Results in Physics, Vol 25, Iss , Pp 104279- (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2211-3797 |
| DOI: |
10.1016/j.rinp.2021.104279 |
| Popis: |
Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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