| Autor: |
Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 619-623 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3327560 |
| Popis: |
We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K – 125 K and 50 K – 4.5 K were observed in different types of FD-SOI p-MOSFETs with channel length $(L_{G}) \leq100$ nm, which is possibly attributed to temperature-dependent dopant ionization induced band-to-band and trap-assisted tunneling across the drain-body junction. The phenomenon of SS linearly decreasing with temperature at ${T}$ < 50 K is not observed in neither FD-SOI n-MOSFETs nor 28 nm bulk CMOSFETs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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