Autor: |
Chaoyang Kang, Hongxin Cai, Xin Zhang, Jun Tang, Pengshou Xu, Ming Li, Haitao Zong |
Jazyk: |
angličtina |
Rok vydání: |
2015 |
Předmět: |
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Zdroj: |
Results in Physics, Vol 5, Iss C, Pp 178-181 (2015) |
Druh dokumentu: |
article |
ISSN: |
2211-3797 |
DOI: |
10.1016/j.rinp.2015.07.003 |
Popis: |
Mn-doped 3C-SiC film has been prepared onto the Si (111) substrate by employing a molecular beam epitaxy method. The experimental analysis establishes that the prepared sample shows the ferromagnetic property with a relatively high Curie temperature (Tc) of 355 K, which is an exciting phenomenon on account of the scarceness in the SiC-based diluted magnetic semiconductor. The analysis derived from the X-ray diffraction and absorption spectroscopy patterns indicates that Mn atoms should react with Si atoms and then form Mn4Si7 compounds. Combined with the theoretical simulation, it is speculated that a new alloy phase of Mn4Si7Cx maybe appear, which should be responsible for the exceptionally high Tc ferromagnetic behavior in the sample. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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