Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

Autor:	Wang Zhiming, Xie Yanze, Kunets Vasyl, Dorogan Vitaliy, Mazur Yuriy, Salamo Gregory
Jazyk:	angličtina
Rok vydání:	2010
Předmět:	Molecular beam epitaxy InGaAs nanostructures GaAs(210) Lateral ordering Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 5, Iss 8, Pp 1320-1323 (2010)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
DOI:	10.1007/s11671-010-9645-7
Popis:	Abstract Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.
Databáze:	Directory of Open Access Journals
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