Comparison of Dopant Incorporation and Near-Infrared Photoresponse for Se-Doped Silicon Fabricated by fs Laser and ps Laser Irradiation
| Autor: | Lingyan Du, Shiping Liu, Jie Yin, Shangzhen Pang, Hao Yi |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Crystals, Vol 12, Iss 11, p 1589 (2022) |
| Druh dokumentu: | article |
| ISSN: | 12111589 2073-4352 |
| DOI: | 10.3390/cryst12111589 |
| Popis: | Se-doped silicon films were fabricated by femtosecond (fs) laser and picosecond (ps) laser irradiating Si–Se bilayer film-coated silicon. The surface morphology, impurity distribution, crystal phase, and near-infrared photocurrent response of fs-laser-processed and ps-laser-processed Si are compared. With the same number of laser pulse irradiation, fs laser induces quasi-ordered micron-size columnar structures with some deeper gullies, and ps laser induces irregular nanoscale spherical particles with some cavities. Compared with the fs-laser-produced Se-doped layer, ps laser irradiation produces a Se-doped layer with better crystallinity and higher doping concentration, resulting in a higher photocurrent response for picosecond laser-processed Si in the near-infrared band. The changes brought about by ps laser processing facilitate the application of ultrafast laser-processed chalcogen-doped silicon for silicon-based integrated circuits. |
| Databáze: | Directory of Open Access Journals |
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