| Autor: |
Youngbin Yoon, Yongki Kim, Myunghun Shin |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Sensors, Vol 24, Iss 17, p 5822 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1424-8220 |
| DOI: |
10.3390/s24175822 |
| Popis: |
We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2O3 channel thickness and doping concentration. Channel depletion and Ga diffusion during manufacturing significantly influence device characteristics, as validated through computer-aided design (TCAD) simulations, which agree with the experimental results. We achieved enhancement-mode (e-mode) operation in VG to achieve a low dark current (1.84 pA) in a fully depleted equilibrium. Quantum confinement in thin β-Ga2O3 layers enhances UV detection (down to 210 nm) by widening the band gap. Compared with bulk materials, dimensionally constrained optical absorption reduces electron–phonon interactions and phonon scattering, leading to faster optical responses. Decreasing β-Ga2O3 channel thickness reduces VT and VG, enhancing power efficiency, dark current, and the photo-to-dark current ratio under dark and illuminated conditions. These results can guide the fabrication of tailored Ga2O3-based DUV phototransistors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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