A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers
| Autor: | Pei-Te Lin, Jia-Wei Chang, Syuan-Ruei Chang, Zhong-Kai Li, Wei-Zhi Chen, Jui-Hsuan Huang, Yu-Zhen Ji, Wen-Jeng Hsueh, Chun-Ying Huang |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Crystals, Vol 11, Iss 3, p 259 (2021) |
| Druh dokumentu: | article |
| ISSN: | 11030259 2073-4352 |
| DOI: | 10.3390/cryst11030259 |
| Popis: | Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The Schottky barrier height (ΦB) is 0.65 eV for Pt/CP/n-Ge, which is a higher value than the value of 0.57 eV for conventional Pt/n-Ge. This demonstrates that the CP interlayer has a significant effect. The relevant junction mechanisms are illustrated using feasible energy level band diagrams. This strategy results in greater stability and enables a device to operate for more than 500 h under ambient conditions. This method realizes a highly stable Schottky contact for n-type Ge, which is an essential element of Ge-based high-speed electronics. |
| Databáze: | Directory of Open Access Journals |
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