| Autor: |
M. Sumets, V. Ievlev, E. Belonogov, V. Dybov, D. Serikov, G. Kotov, A. Turygin |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Journal of Science: Advanced Materials and Devices, Vol 5, Iss 2, Pp 256-262 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2468-2179 |
| DOI: |
10.1016/j.jsamd.2020.02.006 |
| Popis: |
Li–Nb–O amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering method in an Ar environment and an Ar(60%)+O2(40%) gas mixture. A positive effective fixed oxide charge Qeff having negative, -Qeff, and positive, +Qeff, components, exists in the as-grown heterostructures. -Qeff is located near the substrate/film interface, whereas + Qeff is determined by a deficit of Li and O (vacancies) in the bulk of Li–Nb–O films. As-grown films crystallized under thermal annealing (TA) at temperatures up to 600 °C and revealed the formation of polycrystalline LiNbO3. TA at about 520 °C resulted in the formation of the second phase LiNb3O8, increasing + Qeff, and compensating -Qeff entirely. The dielectric constants of the as-grown films exhibit two peaks at the annealing temperatures of 450 °C and 550 °C, which are attributed to the total crystallization and recrystallization of the LN films under TA, respectively. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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