On Strong f-Electron Localization Effect in a Topological Kondo Insulator

Autor: Udai Prakash Tyagi, Kakoli Bera, Partha Goswami
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Symmetry, Vol 13, Iss 12, p 2245 (2021)
Druh dokumentu: article
ISSN: 2073-8994
DOI: 10.3390/sym13122245
Popis: We study a strong f-electron localization effect on the surface state of a generic topological Kondo insulator (TKI) system by performing a mean-field theoretic (MFT) calculation within the framework of the periodic Anderson model (PAM) using the slave boson technique. The surface metallicity, together with bulk insulation, requires this type of localization. A key distinction between surface states in a conventional insulator and a topological insulator is that, along a course joining two time-reversal invariant momenta (TRIM) in the same BZ, there will be an intersection of these surface states, an even/odd number of times, with the Fermi energy inside the spectral gap. For an even (odd) number of surface state crossings, the surface states are topologically trivial (non-trivial). The symmetry consideration and the pictorial representation of the surface band structure obtained here show an odd number of crossings, leading to the conclusion that, at least within the PAM framework, the generic system is a strong topological insulator.
Databáze: Directory of Open Access Journals
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