An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
Autor: | Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily |
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Jazyk: | angličtina |
Rok vydání: | 2001 |
Předmět: | |
Zdroj: | Active and Passive Electronic Components, Vol 24, Iss 3, Pp 135-140 (2001) |
Druh dokumentu: | article |
ISSN: | 0882-7516 1563-5031 |
DOI: | 10.1155/2001/49537 |
Popis: | In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtained by this technique have shown better agreement with measurements data and have allow in the same time to determine the validity domain of Sodini's law [1]. |
Databáze: | Directory of Open Access Journals |
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