An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices

Autor:	Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily
Jazyk:	angličtina
Rok vydání:	2001
Předmět:	Drain saturation voltage Critical field Substrate current Effective mobility Saturation velocity. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 24, Iss 3, Pp 135-140 (2001)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/2001/49537
Popis:	In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtained by this technique have shown better agreement with measurements data and have allow in the same time to determine the validity domain of Sodini's law [1].
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/57fc0a42739b4364b78182b851e3da11 Zobrazit plný text záznamu Plný text View record in DOAJ