| Autor: |
Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 101-106 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3234235 |
| Popis: |
This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-density 2-dimensional electron gas channel and regrown Ohmic contacts. Furthermore, a high-voltage operation of 110 V was achieved owing to the high-density and high-breakdown SiNx layer grown by low-pressure/high-temperature chemical vapor deposition. Three-stage AlGaN buffer layers improved the electron mobility of 2-dimensional electron gas and allowed us to grow a GaN channel with a low carbon concentration. Furthermore, a regrown n-GaN contact layer was employed to minimize source/drain contact resistances. A high drain current of 1470 mA/mm and high breakdown voltage of 258 V were achieved. Our results demonstrate the potential of GaN HEMTs on the AlN substrate as next-generation high-power radio frequency devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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