Magnetic, Antiferroelectric-like Behavior and Resistance Switching Properties in BiFeO3-CaMnO3 Polycrystalline Thin Films
| Autor: | Abdelilah Lahmar, Jacem Zidani, Jamal Belhadi, Ilham Hamdi Alaoui, Hussam Musleh, Jehad Asad, Naji Al Dahoudi, Mimoun El Marssi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: |
ferromagnetic
antiferroelectric-like polycrystalline films BiFeO3-CaMnO3 resistance switching Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| Zdroj: | Materials, Vol 16, Iss 23, p 7392 (2023) |
| Druh dokumentu: | article |
| ISSN: | 1996-1944 |
| DOI: | 10.3390/ma16237392 |
| Popis: | The effect of ferromagnetic CaMnO3 (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO3 is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P–E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching. |
| Databáze: | Directory of Open Access Journals |
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