| Autor: |
Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
IEEE Access, Vol 9, Pp 109745-109753 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2021.3102614 |
| Popis: |
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharging voltages across MOS capacitors in response to high-frequency voltage pulses. This method can identify traps with response times in the order of hundreds of nanoseconds. The results reveal an increasing density of near-interface traps with energy levels above the bottom of the conduction band, which are the active defects reducing the channel-carrier mobility in 4H-SiC MOSFETs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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