Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Autor: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-022-35458-0
Popis: Spin qubits in Si/SiGe quantum dots suffer from variability in the valley splitting which will hinder device scalability. Here, by using 3D atomic characterization, the authors explain this variability by random Si and Ge atomic fluctuations and propose a strategy to statistically enhance the valley splitting
Databáze: Directory of Open Access Journals