Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si
| Autor: | A. I. Blesman, R. B. Burlakov |
|---|---|
| Jazyk: | English<br />Russian |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Омский научный вестник, Vol 1 (163), Pp 50-54 (2019) |
| Druh dokumentu: | article |
| ISSN: | 1813-8225 2541-7541 |
| DOI: | 10.25206/1813-8225-2019-163-50-54 |
| Popis: | Task of studies is a development of the structure and way of fabrication of a photocell capable to take a radiation or in near infrared range of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. Way of fabrication and results of studies of photoelectric features of two spectrum photocells based on two Schottky barrier contacts PtSi-n-Si (or PdSi-nSi), situated on opposite parties silicon plate, are сonsidered. It is shown that the explored photocell can be used for the transformation of the energy of the radiation in the electrical energy at room temperature in two ranges: or in near infrared region of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. This characteristic of the designed photocell will allow to increase its application. Photocell possesses a simple structure and technology with a time of its fabrication in the interval (2,5–3) of the hour. |
| Databáze: | Directory of Open Access Journals |
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