| Autor: |
Mao-Bin Li, Fei Cao, Hai-Fan Hu, Xing-Ji Li, Jian-Qun Yang, Ying Wang |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 591-598 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3084797 |
| Popis: |
This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations. The analysis and comparison of conventional 4H-SiC JBS and 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) diodes verify the resistance tolerance of the latter device to SEB. Silvaco TCAD simulation results prove that the 4H-SiC MBL-JBS modulates the drift region’s electric field distribution and disperses the high-peak electric field at the N−/N+ junction. Moreover, it reduces the impact generation rate at the Schottky, PN and N−/N+ junctions to achieve SEB tolerance. The device’s SEB performance is optimized by adjusting the 4H-SiC MBL-JBS structure parameters, and the SEB threshold voltage is significantly improved compared with the traditional structure. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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