| Autor: |
Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong, Shich-Chuan Wu |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Sensors, Vol 16, Iss 4, p 450 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
1424-8220 |
| DOI: |
10.3390/s16040450 |
| Popis: |
Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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