| Autor: |
G. Nagy, D. Arbet, V. Stopjakova, M. Kovac |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
Radioengineering, Vol 25, Iss 2, Pp 321-331 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
1210-2512 |
| Popis: |
In this paper, a novel bulk-driven cross-coupled charge pump designed in standard 90 nm CMOS technology is presented. The proposed charge pump is based on a dynamic threshold voltage inverter and is suitable for integrated ultra-low voltage converters. Due to a latchup risk, bulk-driven charge pumps can safely be used only in low-voltage applications. For the input voltage below 200 mV and output current of 1 uA, the proposed bulk-driven topology can achieve about 10 % higher efficiency than the conventional gate-driven cross-coupled charge pump. Therefore, it can be effectively used in DC-DC converters, which are the basic building blocks of on-chip energy harvesting systems with ultra-low supply voltage. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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