| Autor: |
Grayson Zulauf, Mattia Guacci, Juan M. Rivas-Davila, Johann W. Kolar |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
IEEE Open Journal of Power Electronics, Vol 1, Pp 210-215 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2644-1314 |
| DOI: |
10.1109/OJPEL.2020.3005879 |
| Popis: |
Dynamic on-resistance (dRon), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no direct dRon measurements in the literature above 1 MHz, leaving designers unable to predict conduction losses in emerging multi-MHz applications. We address this literature gap by collecting the first on-state voltage dRon measurements at multi-MHz frequencies, with a focus on the zero-voltage-switching conditions that are predominantly employed at high frequency. On the selected commercially-available HEMT with a breakdown voltage below 200 V, the dynamic contribution asymptotes above ≈ 2 MHz, a finding predicted by the slow time constants of the traps that cause dRon. For the tested HEMT, we find a maximum dRon increase over the DC resistance of 2× in a multi-MHz, zero-voltage-switched application. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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