| Autor: |
Cheol-Min Lim, Ziqiang Zhao, Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 612-617 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3085981 |
| Popis: |
We have systematically examined electrical characteristics of ultra-thin body (UTB) (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) fabricated by the smart-cut process and have compared their electrical properties with those of (100) ones. The (111) GOI thickness was varied from 29.4 to 7.3 nm. The normal MOSFET operation of a 7.3 nm-thick (111)-oriented GOI nMOSFET has been demonstrated with a reasonable ON/OFF ratio of 104. However, degradation in the effective electron mobility and subthreshold swing (SS) of the (111) GOI nMOSFETs with decreasing the GOI thickness ( $\text{T}_{\mathrm{ GOI}}$ ) was observed. Raman analyses and electrical characteristics of GOI nMOSFET under back-gate operation has suggested that a high interface state density at (111) GOI/buried oxide interfaces as well as low GOI film quality near the back interfaces can be an origin of this degradation of the electrical properties with thin body channels. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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