Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

Autor: Ulrich SM, Michler P, Benyoucef M, Rastelli A, Schmidt OG
Jazyk: angličtina
Rok vydání: 2006
Předmět:
Zdroj: Nanoscale Research Letters, Vol 1, Iss 2, Pp 172-176 (2006)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1007/s11671-006-9019-3
Popis: AbstractWe report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
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