Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
Autor: | Ulrich SM, Michler P, Benyoucef M, Rastelli A, Schmidt OG |
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Jazyk: | angličtina |
Rok vydání: | 2006 |
Předmět: | |
Zdroj: | Nanoscale Research Letters, Vol 1, Iss 2, Pp 172-176 (2006) |
Druh dokumentu: | article |
ISSN: | 1931-7573 1556-276X |
DOI: | 10.1007/s11671-006-9019-3 |
Popis: | AbstractWe report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed. |
Databáze: | Directory of Open Access Journals |
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