| Autor: |
Seung-Mo Kim, Jae Hyeon Jun, Junho Lee, Muhammad Taqi, Hoseong Shin, Sungwon Lee, Haewon Lee, Won Jong Yoo, Byoung Hun Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 14, Iss 20, p 1667 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano14201667 |
| Popis: |
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel with a thickness of several nanometers, has limited broader research. We demonstrated a FBFET using in-plane WSe2 p−n homojunction. The WSe2 FBFET exhibited a minimum subthreshold swing of 153 mV/dec with 30 nm gate dielectric. Our modeling-based projection indicates that the swing of this device can be reduced to 14 mV/dec with 1 nm EOT. Also, the gain of the inverter using the WSe2 FBFET can be improved by up to 1.53 times compared to a silicon CMOS inverter, and power consumption can be reduced by up to 11.9%. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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