Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunctions
| Autor: | Shun-Ming Sun, Wen-Jun Liu, Dmitriy Anatolyevich Golosov, Chen-Jie Gu, Shi-Jin Ding |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019) |
| Druh dokumentu: | article |
| ISSN: | 1931-7573 1556-276X |
| DOI: | 10.1186/s11671-019-3092-x |
| Popis: | Abstract The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga2O3 heterojunction and the AZO/β-Ga2O3 interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
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