| Autor: |
Luyi Yan, Feng Liang, Jing Yang, Ping Chen, Desheng Jiang, Degang Zhao |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 14, Iss 8, p 703 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano14080703 |
| Popis: |
This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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