High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Autor:	Kukurudziak M. S., Andreeva O. P., Lipka V. M.
Jazyk:	English<br />Russian
Rok vydání:	2020
Předmět:	photodiode silicon sensitivity technological mode Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 16-19 (2020)
Druh dokumentu:	article
ISSN:	2225-5818 2309-9992 10667415
DOI:	10.15222/TKEA2020.5-6.16
Popis:	The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/ae50603b8bf04e0cbfe10667415559ed Zobrazit plný text záznamu View record in DOAJ