Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities

Autor:	Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	charge-pumping electrical characterization interface traps SOI wafer bonding Si layer transfer Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 3 (2023)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2007.3.831
Popis:	The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea Zobrazit plný text záznamu View record in DOAJ