Light soaking of hydrogenated amorphous silicon: a short review
Autor: | Na Wang, Fanying Meng, Liping Zhang, Zhengxin Liu, Wenzhu Liu |
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Jazyk: | angličtina |
Rok vydání: | 2024 |
Předmět: | |
Zdroj: | Carbon Neutrality, Vol 3, Iss 1, Pp 1-10 (2024) |
Druh dokumentu: | article |
ISSN: | 2788-8614 2731-3948 |
DOI: | 10.1007/s43979-024-00093-9 |
Popis: | Abstract Hydrogenated amorphous silicon (a-Si:H) has a long history in the development of photovoltaics, especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells. More than 40 years ago, Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking. This phenomenon has been widely investigated for electronic applications. In contrast to that, we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network. Here we survey these two photoelectronic effects, and discuss their implementations to silicon solar cells. |
Databáze: | Directory of Open Access Journals |
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