Low-Cost CuIn1−xGaxSe2 Ultra-Thin Hole-Transporting Material Layer for Perovskite/CIGSe Heterojunction Solar Cells

Autor: Liann-Be Chang, Chzu-Chiang Tseng, Gwomei Wu, Wu-Shiung Feng, Ming-Jer Jeng, Lung-Chien Chen, Kuan-Lin Lee, Ewa Popko, Lucjan Jacak, Katarzyna Gwozdz
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Applied Sciences, Vol 9, Iss 4, p 719 (2019)
Druh dokumentu: article
ISSN: 2076-3417
DOI: 10.3390/app9040719
Popis: This paper presents a new type of solar cellwith enhanced optical-current characteristics using an ultra-thin CuIn1−xGaxSe2 hole-transporting material (HTM) layer (3NH3PbI3 (MAPbI3) perovskite active absorbing material. It promoted carrier transportand led to an improved device with good ohmic-contacts. The solar cell was prepared as a bi-layer Mo/CuIn1−xGaxSe2/perovskite/C60/Ag multilayer of nano-structures on an FTO (fluorine-doped tin oxide) glass substrate. The ultra-thin CuIn1−xGaxSe2 HTM layers were annealed at various temperatures of 400, 500, and 600 °C. Scanning electron microscopy studies revealed that the nano-crystal grain size of CuIn1−xGaxSe2 increased with the annealing temperature. The solar cell results show an improved optical power conversion efficiency at ~14.2%. The application of the CuIn1−xGaxSe2 layer with the perovskite absorbing material could be used for designing solar cells with a reduced HTM thickness. The CuIn1−xGaxSe2 HTM has been evidenced to maintain a properopen circuit voltage, short-circuit current density and photovoltaic stability.
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