| Autor: |
Minki Suh, Minsang Ryu, Jonghyeon Ha, Minji Bang, Dabok Lee, Hojoon Lee, Hyunchul Sagong, Jungsik Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 12, Pp 155119-155124 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2024.3481472 |
| Popis: |
This study investigates the row hammer tolerance and potential degradation by capacitive crosstalk (CC) and parasitic bipolar junction transistor (BJT) effect in vertically stacked dynamic random-access memory (VS-DRAM) using technology computer-aided design (TCAD) simulations. The close arrangement of word lines in VS-DRAM results in a subthreshold leakage by the CC effect. Furthermore, as VS-DRAM has a floating body, hole accumulation in the body occurs via gate-induced drain leakage (GIDL) at the storage node in the cell that stores ’1’. This can be accelerated by activating the bit-line (BL). The accumulated holes cause leakage current ( $I_{BJT}$ ) by the parasitic BJT when the BL state becomes low and it is found that $I_{BJT}$ can be enhanced by the CC effect in this study. The row hammer effect and $I_{BJT}$ by the CC and parasitic BJT effects can be mitigated by reducing Si width. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
