N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

Autor:	Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Jazyk:	angličtina
Rok vydání:	2024
Předmět:	gallium compounds high electron mobility transistors III‐V semiconductors millimetre wave field effect transistors power amplifiers wide band gap semiconductors Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Druh dokumentu:	article
ISSN:	1350-911X 0013-5194
DOI:	10.1049/ell2.13272
Popis:	Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectric. A favourable trade‐off between gate fringing capacitance and transconductance was established, resulting in an improved current gain cutoff frequency times gate length (ft·LG) figure of merit compared to standard Schottky‐gate and metal‐insulator‐semiconductor (MIS) HEMTs. The etched gate dielectric MISHEMT demonstrated a maximum ft·LG of 15.0 GHz·µm for an LG of 100 nm.
Databáze:	Directory of Open Access Journals
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