Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN
Autor: | Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu |
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Jazyk: | angličtina |
Rok vydání: | 2016 |
Předmět: | |
Zdroj: | Applied Sciences, Vol 6, Iss 2, p 60 (2016) |
Druh dokumentu: | article |
ISSN: | 2076-3417 |
DOI: | 10.3390/app6020060 |
Popis: | Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO/n-GaN system. By placing a thin Ti interlayer between the ITO-ZnO/n-GaN interface, nonalloyed ohmic contact was achieved. The inset Ti interlayer was both beneficial both for enhancing the outdiffusion of the nitrogen atoms at the surface of the n-GaN and suppressing the indiffusion of oxygen atoms from the surface of the ITO-ZnO to n-GaN. The figure-of-merit (FOM), evaluated from the specific contact resistance and optical property of the Ti/ITO-ZnO system’s contact to the n-GaN epilayer, was optimized further at an adequate thickness of the Ti interlayer. |
Databáze: | Directory of Open Access Journals |
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