Calculate the energy levels of vanadium V2+-grafted semiconductor GaAs using the theoretical orthogonal compliant model
| Autor: | Adnan Al-Shekh, Ibtisam Abdullah |
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| Jazyk: | Arabic<br />English |
| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | مجلة التربية والعلم, Vol 18, Iss 1, Pp 66-78 (2006) |
| Druh dokumentu: | article |
| ISSN: | 1812-125X 2664-2530 |
| DOI: | 10.33899/edusj.2006.162866 |
| Popis: | To evaluate the energy level for Vanadium ion in GaAs: V2+ the ground term has determined (4F). Using the concepts of isomorphism on orbital states for the ground term of GaAs: V2+ where the states are described by fictitious orbits of L'=0, T=1/2 & L'=1, the matrix elements for spin Hamiltonion and effective Hamiltonion are calculated and comparing /J,M,/ and /Mi, Ms/ for J=5/2, L'=1&S=3/2. Our results shows that V2+ displacement affected by e and t2 vibrational modes with T * e and T* t2 Jahn Teller effect rather than T*(t2+e) Jahn Teller effect |
| Databáze: | Directory of Open Access Journals |
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