Inverted bit‐line sense amplifier with offset‐cancellation capability

Autor:	J. Park, D.‐H. Shin, Y.‐H. Cho, K.‐W. Kwon
Jazyk:	angličtina
Rok vydání:	2016
Předmět:	inverted bit‐line sense amplifier offset‐cancellation capability low‐power DRAM applications read failure Vth variability power supply Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Electronics Letters, Vol 52, Iss 9, Pp 692-694 (2016)
Druh dokumentu:	article
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el.2015.4368
Popis:	An inverted bit‐line sense amplifier (BLSA) equipped with offset compensation capability for low‐power DRAM applications is proposed. The sequential operation of the inverted BLSA allows us to eliminate the edge dummy array in an open bit‐line structure resulting in 1.7% less total chip area despite of 10% area penalty of the proposed BLSA occupied by extra switches. For 8‐Gb DRAM in 20‐nm class technology, the read failure induced by Vth variability is completely removed due to the offset cancellation. The proposed BLSA maintains the gradual increase of the sensing delay when decreasing the power supply down to 0.6 V, while intrinsic read fail prevails below 0.9 V with the conventional one.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/ed4e865d6cf74a93a2db5197a14eb365 Zobrazit plný text záznamu Plný text View record in DOAJ