Autor: |
Jianping Li, Hao Pan, Haiyang Sun, Ruxin Zheng, Kai Ren |
Jazyk: |
angličtina |
Rok vydání: |
2023 |
Předmět: |
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Zdroj: |
Crystals, Vol 13, Iss 6, p 981 (2023) |
Druh dokumentu: |
article |
ISSN: |
2073-4352 |
DOI: |
10.3390/cryst13060981 |
Popis: |
Two-dimensional materials present abundant novel properties when used in advanced applications, which develops considerable focus. In this investigation, the first-principles calculations are explored to study the structural characteristic of the monolayered SiP2, which is stable even at 1200 K. The SiP2 monolayer is a semiconductor with an indirect bandgap of 2.277 eV. The decent band alignment and light absorption capacity imply that the application is a suitable photocatalyst for water splitting. Furthermore, the SiP2 monolayer possesses an ultrafast electron mobility at 33,153 cm2·V−1·s−1 in the transport direction. The excellent Gibbs free energy of the SiP2 monolayer is also addressed in an examination of the hydrogen evolution reaction. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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