| Autor: |
Xinyu Wang, Ming Li, Fanpeng Zeng, Bin Zhang, Lei Ge, Yingxin Cui, Mingsheng Xu, Yu Zhong, Kuan Yew Cheong, Xiaobo Hu, Xiangang Xu, Jisheng Han |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Results in Physics, Vol 62, Iss , Pp 107799- (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2211-3797 |
| DOI: |
10.1016/j.rinp.2024.107799 |
| Popis: |
This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been developed by optimizing the number, length, and thickness of JTE steps. The JTE with step number of 4 and step length of 8 μm (SBD-n4L8) achieved a breakdown voltage of 1626 V at the same drift layer thickness of 10 μm, outperforming other step-based JTE structures. At reverse voltage of 1200 V, the SBD-n4L8 demonstrates a decrease in reverse leakage current with a uniform step-like current distribution profile. Subsequent analysis of the underlying mechanisms showed that, with step thickness of 2 μm, the SBD-n5L8 located at the corner and edge of the terminal region significantly reduced the peak electric field by more than 12.6 %. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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