Observation of weak localization in dual-gated bilayer MoS_{2}

Autor: Tingyu Qu, Michele Masseroni, Takashi Taniguchi, Kenji Watanabe, Barbaros Özyilmaz, Thomas Ihn, Klaus Ensslin
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Physical Review Research, Vol 6, Iss 1, p 013216 (2024)
Druh dokumentu: article
ISSN: 2643-1564
DOI: 10.1103/PhysRevResearch.6.013216
Popis: We investigate the magnetoresistance of a dual-gated bilayer MoS_{2} encapsulated by hexagonal boron nitride. At low magnetic fields (|B|
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