Ge-on-Si Plasma-Enhanced Chemical Vapor Deposition for Low-Cost Photodetectors
| Autor: | C. G. Littlejohns, A. Z. Khokhar, D. J. Thomson, Y. Hu, L. Basset, S. A. Reynolds, G. Z. Mashanovich, G. T. Reed, F. Y. Gardes |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | IEEE Photonics Journal, Vol 7, Iss 4, Pp 1-8 (2015) |
| Druh dokumentu: | article |
| ISSN: | 1943-0655 83354891 |
| DOI: | 10.1109/JPHOT.2015.2456069 |
| Popis: | The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures > 800°C, often for a period of several hours. Here, we present a low-temperature (400°C) low-cost plasma-enhanced chemical vapor deposition (PECVD) Ge-on-Si growth study and, subsequently, fabricate a high-speed zero-bias 12.5-Gb/s waveguide integrated photodetector with a responsivity of 0.1 A/W at a wavelength of 1550 nm. This low-energy device demonstrates the feasibility of the PECVD method for the fabrication of low-cost low-thermal-budget Ge-on-Si devices. |
| Databáze: | Directory of Open Access Journals |
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