| Autor: |
John Allan Wilson, Nigel Keith Watson, Enrico Giulio Villani, Mike Tyndel, Renato Turchetta, Konstantin Stefanov, Marcel Stanitzki, Vladimir Rajovic, Matthew Noy, Owen Daniel Miller, Yoshiari Mikami, Anne-Marie Magnan, Paul Dominic Dauncey, Jamie Phillip Crooks, Jamie Alexander Ballin |
| Jazyk: |
angličtina |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
Sensors, Vol 8, Iss 9, Pp 5336-5351 (2008) |
| Druh dokumentu: |
article |
| ISSN: |
1424-8220 |
| DOI: |
10.3390/s8095336 |
| Popis: |
In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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