| Autor: |
Hisato Yabuta, Naho Itagaki, Toshikazu Ekino, Yuzo Shigesato |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Open Journal of Nanotechnology, Vol 3, Pp 149-152 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2644-1292 |
| DOI: |
10.1109/OJNANO.2022.3222850 |
| Popis: |
We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
