| Autor: |
Ye Tao, Xuhong Li, Haiyang Xu, Zhongqiang Wang, Wentao Ding, Weizhen Liu, Jiangang Ma, Yichun Liu |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 714-720 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2843162 |
| Popis: |
We demonstrated an effective approach to suppress conductive filament (CF) overgrowth through the introduction of a AgInSbTe (AIST) buffer layer into amorphous carbon-based electrochemical metallization memory devices. The overshoot current (IOS) was monitored in real-time for the devices with and without the AIST layer. Our results indicates that the IOS was eliminated after insertion of the buffer layer. The effect of the AIST layer on CF overgrowth suppression could be attributed to the lower VSET and capacity to hold excess Ag-ions. The optimized Pt/a-C/AIST/Ag devices exhibited highly uniform switching parameters, fast switching speed (6 cycles). |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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