Autor: |
Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova |
Jazyk: |
angličtina |
Rok vydání: |
2024 |
Předmět: |
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Zdroj: |
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024) |
Druh dokumentu: |
article |
ISSN: |
2041-1723 |
DOI: |
10.1038/s41467-024-45868-x |
Popis: |
Abstract As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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