| Autor: |
Abhishek Karn, Yang Hao Chan, Ulysse Chazarin, Peng Chen, Woei Wu Pai |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 12, Iss 3, Pp 035240-035240-10 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/6.0001402 |
| Popis: |
Hetero-structures of transition metal dichalcogenide (TMD) layers offer vast possibilities of new materials properties. The growth behaviors of such TMD hetero-structures can be complex. In this study, we report the structure modification of a VSe2 monolayer by the molecular beam deposition of Te, V, or both. With a typical growth temperature of 300 °C and a nominal flux rate, we found that Te deposition leaves the VSe2 intact. Vanadium deposition, in contrast, leads to small clusters ordered in stripes along well-defined directions. The charge density wave symmetry of monolayer VSe2 surprisingly changes in small regions enclosed by such vanadium stripes. With V and Te co-deposition, a dramatic change of the monolayer surface structure to a (2 × 1) ordered phase is observed. This study illustrates the unexpected complexities involved in preparing even a simple bilayer TMD hetero-structure, such as VTe2/VSe2. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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