Autor: |
M Handwerg, R Mitdank, S Levcenco, S Schorr, S F Fischer |
Jazyk: |
angličtina |
Rok vydání: |
2020 |
Předmět: |
|
Zdroj: |
Materials Research Express, Vol 7, Iss 10, p 105908 (2020) |
Druh dokumentu: |
article |
ISSN: |
2053-1591 |
DOI: |
10.1088/2053-1591/abc276 |
Popis: |
For single crystalline sulfur-based kesterite Cu _2 ZnSnS _4 the electrical and thermal conductivity are measured from 20 K to 320 K. The electrical conductivity decreases exponentially with decreasing temperature. The temperature dependence can be assigned to Mott-variable-range-hopping, an electrical transport process within an impurity band in the band gap. With the 3 ω -method a thermal conductivity room temperature value of 5.1 ± 0.5 Wm ^−1 K ^−1 and a maximal value of 8.0 ± 0.5 Wm ^−1 K ^−1 at 100 K are found. Phonon-phonon-umklapp-scattering can explain the high temperature range from 100 K to 320 K. The low temperature values of the thermal conductivity are dominated by the temperature-dependence of the specific heat capacity, due to a reduced phonon-mean-free-path, owing to phonon-impurity-scattering. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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