Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models

Autor: Aanand, Sheu Gene, Imam Syed Sarwar, Lu Shao Wei, Yang Shao-Ming, Fan Ming Jen
Jazyk: English<br />French
Rok vydání: 2018
Předmět:
Zdroj: MATEC Web of Conferences, Vol 201, p 01002 (2018)
Druh dokumentu: article
ISSN: 2261-236X
DOI: 10.1051/matecconf/201820101002
Popis: In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.
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