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The primary goals of this project are to analyze the structure and assess the photovoltaic performance of n-i-p structured formamidinium tin iodide (FASnI3) perovskite solar cells at different operating temperatures to inspect the impact of operating temperature on device performance using a Solar Cell Capacitance Simulator (SCAPS). The simulated device structure is Au/spiro-OMeTAD/P3HT/FASnI3/PCBM/TiO2/FTO, whereas spiro-OMeTAD and TiO2 serve as the hole transport layer and electron transport layer, respectively. SCAPS simulation has been performed at 200, 300, 400, 500, and 600 K operating temperatures, and corresponding current density vs voltage (J–V) characteristics have been studied in addition to the photovoltaic metrics, such as open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE). The thickness fluctuation and doping concentration variation of the absorber layer and the electron affinity variation and thickness variation of the Hole Transport Layer (HTL) and Electron Transport Layer (ETL) under temperature variation were also examined analytically. It has been found that there is an inverse relationship between temperature and power conversion efficiency (PCE). The extended thickness of the absorber layer enhances the PCE and JSC. Temperature variations in the thickness of the ETL and HTL have a minimal effect on the PCE and JSC of the device. At standard room temperature (300 K operating temperature), the solar cell parameters are found to be a short-circuit current density (JSC) of 17.93 mA/cm2, open-circuit voltage (VOC) of 1.06 V, fill factor (FF) of 67.46% and power conversion efficiency (PCE) of 17.93%. |
