| Autor: |
Aleksei Almaev, Nikita Yakovlev, Viktor Kopyev, Vladimir Nikolaev, Pavel Butenko, Jinxiang Deng, Aleksei Pechnikov, Petr Korusenko, Aleksandra Koroleva, Evgeniy Zhizhin |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Chemosensors, Vol 11, Iss 6, p 325 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2227-9040 |
| DOI: |
10.3390/chemosensors11060325 |
| Popis: |
The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H2 exposure exceeded the corresponding values of single κ(ε)-Ga2O3:Sn and SnO2 films within the temperature range of 25–175 °C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/κ(ε)-Ga2O3:Sn structure to 104 ppm of H2 and 100 ppm of NO2 were 30–47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 °C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on κ(ε)-Ga2O3:Sn. The SnO2/κ(ε)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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