Optical properties of porous silicon p-Si (100)
| Autor: | P. O. Gentsar, M. V. Vuichyk, M. V. Isaev, P. O. Lischuk |
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| Jazyk: | English<br />Ukrainian |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 264-268 (2019) |
| Druh dokumentu: | article |
| ISSN: | 1729-4428 2309-8589 |
| DOI: | 10.15330/pcss.20.3.264-268 |
| Popis: | In this paper the reflectance spectra and transmission spectra of p-Si (100) porous silicon (PS) and silicon wires in the spectral range of 200 ÷ 1800 nm were investigated. Pore size of PS was 5 μm (lpor Si layer) and 50 μm (lpor Si layer) with porosity of 45%, 55% and 65%. The length of silicon wires varies from 5.5 μm, to 50 μm with a porosity of 60%. The decrease in the band gap of p-Si (100) porous silicon and silicon wires which grown on both sides of p-Si (100) as compared to the single crystal p-Si (100) is explained by the quantum-sized effect that occurs in the investigated objects. |
| Databáze: | Directory of Open Access Journals |
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