| Autor: |
Guoyou Liu, Rongjun Ding, Haihui Luo |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Engineering, Vol 1, Iss 3, Pp 361-366 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2095-8099 |
| DOI: |
10.15302/J-ENG-2015043 |
| Popis: |
Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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