Autor: |
Chia-Yen Huang, Pei-Yu Wu, Kai-Shiang Chang, Yun-Hsiang Lin, Wei-Chih Peng, Yem-Yeu Chang, Jui-Ping Li, Hung-Wei Yen, YewChung Sermon Wu, Hideto Miyake, Hao-Chung Kuo |
Jazyk: |
angličtina |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
AIP Advances, Vol 7, Iss 5, Pp 055110-055110-6 (2017) |
Druh dokumentu: |
article |
ISSN: |
2158-3226 |
DOI: |
10.1063/1.4983708 |
Popis: |
A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The peakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec, respectively, indicating a threading dislocation density |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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